MMFT2N02EL - Motorola

MMFT2N02EL MEDIUM POWER MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2N02EL/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low thre.

Features

ment to Interface Power Loads to Logic Level ICs, VGS(th) = 2 Volts Max
• Low RDS(on) — 0.15 Ω max
• The SOT
  –223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel Use MMFT2N02ELT1 to order the 7 inch/1000 unit reel. Use MMFT2N02ELT3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Drain
  –to
  –Source Voltage Gate
  –to
  –Source Voltage — Continuous Drain Current — Continuous Drain Current — Pulsed Total Power Dissipation @.