MMFT108T1 - Motorola

MMFT108T1 N-channel MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT108T1/D Field Effect Transistor N–Channel Enhancement–Mode Logic Level SOT–223 ® 2, 4 DRAIN MMFT108T1 TMOS FET TRANSISTOR N–CHANNEL — ENHANCEMENT 1 GATE 3 SOURCE 1 2 3 4 CASE 318E–04, STYLE 3 SOT–223 (TO–261AA) MAXIMUM RATINGS Rating Drain – to–Source Voltage Gate–to–Source Voltage — Con.

Features

torola, Inc. 1997 1 MMFT108T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain
  –to
  –Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = 130 V, VGS = 0) Gate
  –Body Leakage Current — Reverse (VGS = 15 Vdc, VDS = 0) V(BR)DSS 200 IDSS — IGSS — — 10 — 30 nAdc — — nAdc Vdc ON CHARACTERISTICS (2) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) Static Drain
  –to
  –Source On
  –Resistance (VGS = 2.0 Vdc, ID = 50 mA) (VGS = 2.8 Vdc, ID = 100 mA) Drain Cutoff Current (VGS = 0.2 V, VDS = 70 V) VGS(t.