MMFT3055VL - Motorola

MMFT3055VL POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT3055VL/D ™ Data Sheet TMOS V™ SOT-223 for Surface Mount Designer's MMFT3055VL N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell.

Features

of TMOS V
• On
  –resistance Area Product about One
  –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E
  –FET Predecessors Features Common to TMOS V and TMOS E
  –FETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E
  –FET
• Available in 12 mm Tape & Reel Use MMFT3055VLT1 to order the 7 inch/1000 unit reel Use MMFT3055VLT3 to order the 13 inch/4000 unit reel MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –to
  –Source Voltage Drain
  –to
  –Gate Voltage (RG.