MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power.
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) — 0.15 Ω max
• The SOT−223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel
Use MMFT3055ET1 to order the 7 inch/1000 unit reel. Use MMFT3055ET3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage− Continuous
Drain Current − Continuous Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissip.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMFT3055ET1 |
ON Semiconductor |
Power MOSFET | |
2 | MMFT3055E |
Motorola |
MEDIUM POWER MOSFET | |
3 | MMFT3055E |
ON Semiconductor |
Power MOSFET | |
4 | MMFT3055EL |
Motorola |
MEDIUM POWER MOSFET | |
5 | MMFT3055V |
ON Semiconductor |
Power MOSFET | |
6 | MMFT3055V |
Motorola |
Power MOSFET | |
7 | MMFT3055VL |
Motorola |
POWER FET | |
8 | MMFT107T1 |
Motorola |
MEDIUM POWER MOSFET | |
9 | MMFT107T1 |
ON Semiconductor |
Power MOSFET | |
10 | MMFT108T1 |
Motorola |
N-channel MOSFET | |
11 | MMFT1N10E |
Motorola |
MEDIUM POWER MOSFET | |
12 | MMFT2406T1 |
Motorola |
MEDIUM POWER MOSFET |