MMFT3055ET1 - ON Semiconductor

MMFT3055ET1 Power MOSFET

MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power.

Features

• Silicon Gate for Fast Switching Speeds
• Low RDS(on) — 0.15 Ω max
• The SOT−223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel Use MMFT3055ET1 to order the 7 inch/1000 unit reel. Use MMFT3055ET3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage− Continuous Drain Current − Continuous Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissip.