MMDL770T1 - ON Semiconductor

MMDL770T1 Schottky Barrier Diode

MMDL770T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • • • • • • Extremely Low Minority Carrier Lifetime Very Low Capacitance – 1.0 pF @ 20 V Low Reverse Leakage – 200 nA (max) High Reverse Voltage – .

Features

, 2001 1 January, 2000
  – Rev. 0 Publication Order Number: MMDL770T1/D Free Datasheet http://www.datasheet4u.com/ MMDL770T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 20 Volts, f = 1.0 MHZ) Reverse Leakage (VR = 35 V) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) Symbol V(BR)R 70 CT
  – IR
  – VF
  – 0.7 1.0 9.0 200 Vdc 0.5 1.0 nAdc
  –
  – pF Min Typ Max Unit Volts TYPICAL CHARACTERISTICS 2.0 CT, TOTAL CAPACITANCE (pF) 1.6 1.2 0.8 0.4 0 MMBD770T1 500 f = 1.0 MHz t , MINORITY CARRIER LIFETIME (ps) MMBD770.