MMDL770T1 ON Semiconductor Schottky Barrier Diode Datasheet, en stock, prix

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MMDL770T1

ON Semiconductor
MMDL770T1
MMDL770T1 MMDL770T1
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Part Number MMDL770T1
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description MMDL770T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital app...
Features , 2001 1 January, 2000
  – Rev. 0 Publication Order Number: MMDL770T1/D Free Datasheet http://www.datasheet4u.com/ MMDL770T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 20 Volts, f = 1.0 MHZ) Reverse Leakage (VR = 35 V) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) Symbol V(BR)R 70 CT
  – IR
  – VF
  – 0.7 1.0 9.0 200 Vdc 0.5 1.0 nAdc
  –
  – pF Min Typ Max Unit Volts TYPICAL CHARACTERISTICS 2.0 CT, TOTAL CAPACITANCE (pF) 1.6 1.2 0.8 0.4 0 MMBD770T1 500 f = 1.0 MHz t , MINORITY CARRIER LIFETIME (ps) MMBD770...

Document Datasheet MMDL770T1 Data Sheet
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