MMDL770T1 |
Part Number | MMDL770T1 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | MMDL770T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital app... |
Features |
, 2001
1
January, 2000 – Rev. 0 Publication Order Number: MMDL770T1/D Free Datasheet http://www.datasheet4u.com/ MMDL770T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 20 Volts, f = 1.0 MHZ) Reverse Leakage (VR = 35 V) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) Symbol V(BR)R 70 CT – IR – VF – 0.7 1.0 9.0 200 Vdc 0.5 1.0 nAdc – – pF Min Typ Max Unit Volts TYPICAL CHARACTERISTICS 2.0 CT, TOTAL CAPACITANCE (pF) 1.6 1.2 0.8 0.4 0 MMBD770T1 500 f = 1.0 MHz t , MINORITY CARRIER LIFETIME (ps) MMBD770... |
Document |
MMDL770T1 Data Sheet
PDF 62.80KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMDL770T1 |
ETL |
Schottky Barrier Diode | |
2 | MMDL770T1G |
ON Semiconductor |
Schottky Barrier Diode | |
3 | MMDL770 |
GME |
Schottky Barrier Diode | |
4 | MMDL770 |
WON-TOP |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
5 | MMDL707 |
LGE |
Schottky Barrier Diode |