MMDL770T1G - ON Semiconductor

MMDL770T1G Schottky Barrier Diode

MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • • • • • Extremely Low Minority Carrier Lifetime Very Low Capacitance − 1.0 pF @ 20 V Low Reverse Leakage − 200 nA (max) High Reverse Vo.

Features

•
•
•
•
• Extremely Low Minority Carrier Lifetime Very Low Capacitance − 1.0 pF @ 20 V Low Reverse Leakage − 200 nA (max) High Reverse Voltage − 70 V (min) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE MAXIMUM RATINGS Rating Reverse Voltage Symbol VR Value 70 Unit Vdc 1 CATHODE 2 ANODE 2 1 SOD−323 CASE 477 STYLE 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol P.