MMDL770 - GME

MMDL770 Schottky Barrier Diode

Production specification Schottky Barrier Diode FEATURES  Low reverse leakage—IR=200nA(Max.).  Very Low Capacitance—1.0pF @20V.  Extremely Low minority carrier lifetime.  High reverse leakage—70V(min.) Pb Lead-free MMDL770 APPLICATIONS  For high-efficiency UHF and VHF detector applications. SOD-323 ORDERING INFORMATION Type No. Marking MMDL770.

Features

 Low reverse leakage—IR=200nA(Max.).
 Very Low Capacitance—1.0pF @20V.
 Extremely Low minority carrier lifetime.
 High reverse leakage—70V(min.) Pb Lead-free MMDL770 APPLICATIONS
 For high-efficiency UHF and VHF detector applications. SOD-323 ORDERING INFORMATION Type No. Marking MMDL770 5H Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits DC Reverse Voltage VR 70 Power Dissipation Thermal resistance,junction to ambient air PD RθjA 200 635 Junction temperature Tj 150 Storage temperature TSTG -55 to+150 Unit V mW ℃/W ℃ .