MMBR911MLT1 - Microsemi

MMBR911MLT1 RF & MICROWAVE TRANSISTORS

The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATURES ! High FTau-6.0 GHz ! Low noise-2.9dB@1GHz ! Low cost SOT23 package Symbol VCBO VCEO VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TC.

Features

! High FTau-6.0 GHz ! Low noise-2.9dB@1GHz ! Low cost SOT23 package Symbol VCBO VCEO VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Parameter Value Collector-Base Voltage 20 Collector-Emitter Voltage 12 Emitter-Base Voltage 2.0 Device Current 60 Power Dissipation 333 Junction Temperature 150 Storage Temperature -55 to +150 Unit V V V mA mW C C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 225 C/W APPLICATIONS/BENEFITS ! LNA, Oscillator, Pre-Driver SOT-23 MMBR911MLT1 Symbol BVCBO BVCEO ICBO hFE STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C) Test .