MMBR911 - Motorola

MMBR911 NPN Silicon High-Frequency Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR911LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This Motorola small–signal plastic transistor offers superior quality and performance at low cost.

Features

5°C (1) Derate linearly above Tcase = 75°C Storage Temperature Maximum Junction Temperature Symbol VCEO VCBO VEBO IC PD(max) Tstg TJmax Value 12 20 2.0 60 333 4.44
  – 55 to +150 150 Unit Vdc Vdc Vdc mA mW mW/°C °C °C THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case Symbol RθJC Value 225 Unit °C/W DEVICE MARKING MMBR911LT1 = 7P NOTE: 1. Case temperature measured on collector lead immediately adjacent to body of package. REV 8 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MMBR911LT1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min T.