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·Low Noise ·High Power Gain- Gpe = 12.0 dB TYP. @ f = 1 GHz APPLICATIONS ·Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage IC Collector Current-Co.
Breakdown Voltage IE= 0.1mA ; IC= 0 25 2 V V ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.05 μA hFE DC Current Gain COB Output Capacitance IC= 5mA ; VCE= 5V IE= 0 ; VCB= 10V; f= 1MHz 50 200 1.0 pF fT Current-Gain—Bandwidth Product IC= 15mA ; VCE= 10V; f= 1GHz 3.8 GHz Gpe Common-Emitter Amplifier Gain NFmin Minimum Noise Figure IC= 5mA ; VCC= 6V; f= 1GHz IC= 5mA ; VCE= 6V; f= 1GHz 12 dB 1.9 dB isc website：www.iscsemi.cn 2 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMBR901 |
Lunsure Electronic |
NPN Silicon High-Frequency Transistor |
|
| 2 | MMBR901 |
Motorola |
RF AMPLIFIER TRANSISTOR |
|
| 3 | MMBR901LT1 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 4 | MMBR901LT1 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 5 | MMBR901LT3 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 6 | MMBR911 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 7 | MMBR911 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 8 | MMBR911L |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 9 | MMBR911LT1 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 10 | MMBR911LT1 |
Advanced Power Technology |
NPN SILICON HIGH-FREQUENCY TRANSISTOR |
|
| 11 | MMBR911LT1G |
Advanced Power Technology |
NPN SILICON HIGH-FREQUENCY TRANSISTOR |
|
| 12 | MMBR911MLT1 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
|