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Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This small–signal plastic transistor offers superior quality and performance at low cost. MMBR911LT1 MMBR911LT1G * G Denotes RoHS Compliant, Pb Free Terminal Finish FEATURES: • High Gain–Bandwidth Product fT = 7.0 GHz (Typ.
• High Gain
–Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA
• Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz
• High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz
• State
–of
–the
–Art Technology Fine Line Geometry Ion
–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation
• Available in tape and reel packaging options: T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Symbol VCEO VCBO VEBO IC PD(max)
TSTG TJmax
Rating Collector-Emitter Voltage Collector-Base Voltage
Emitter-Base V.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMBR911LT1 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 2 | MMBR911LT1 |
Advanced Power Technology |
NPN SILICON HIGH-FREQUENCY TRANSISTOR |
|
| 3 | MMBR911L |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 4 | MMBR911 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 5 | MMBR911 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 6 | MMBR911MLT1 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
|
| 7 | MMBR901 |
Lunsure Electronic |
NPN Silicon High-Frequency Transistor |
|
| 8 | MMBR901 |
Motorola |
RF AMPLIFIER TRANSISTOR |
|
| 9 | MMBR901L |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 10 | MMBR901LT1 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 11 | MMBR901LT1 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 12 | MMBR901LT3 |
Motorola |
NPN Silicon High-Frequency Transistor |
|