The CENTRAL SEMICONDUCTOR MJE700T, MJE800T series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Curre.
BVCEO IC=50mA (MJE700T,701T,800T,801T) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700T,702T,800T,802T) VCE(SAT) IC=2.0A, IB=40mA (MJE701T,703T,801T,803T) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700T,702T,800T,802T) VBE(ON) VCE=3.0V, IC=2.0A (MJE701T,703T,801T,803T) VBE(ON) VCE=3.0V, IC=4.0A hFE VCE=3.0V, IC=1.5A (MJE700T,702T,800T,802T) 750 hFE VCE=3.0V, IC=2.0A (MJE701T,703T,801T,803T) 750 hFE VCE=3.0V, IC=4.0A 100 fT VCE=3.0V, IC=1.5A, f=1.0MHz 1.0 MAX 100 500 100 2.0 2.5 2.8 3.0 2.5 2.5 3.0 UNITS V V V A mA W °C °C/W UNITS μA μA μA mA V V V V V V V V MHz R1 (2.
·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MJE701 |
Fairchild |
PNP Epitaxial Silicon Darlington Transistor | |
2 | MJE701 |
INCHANGE |
PNP Transistor | |
3 | MJE701 |
Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS | |
4 | MJE700 |
INCHANGE |
PNP Transistor | |
5 | MJE700 |
Motorola |
4.0 AMPERE DARLINGTON POWER TRANSISTORS | |
6 | MJE700 |
ON |
DARLINGTON POWER TRANSISTORS | |
7 | MJE700 |
Fairchild |
PNP Epitaxial Silicon Darlington Transistor | |
8 | MJE700 |
Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS | |
9 | MJE700G |
ON Semiconductor |
Plastic Darlington Complementary Silicon Power Transistors | |
10 | MJE700T |
Motorola |
4.0 AMPERE DARLINGTON POWER TRANSISTORS | |
11 | MJE700T |
Central Semiconductor |
POWER TRANSISTOR | |
12 | MJE700T |
INCHANGE |
PNP Transistor |