Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Le.
• High DC Current Gain − hFE = 2000 (Typ) @ IC
= 2.0 Adc
• Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage − Multiplication
• Choice of Packages − MJE700 and MJE800 Series
• These Devices are Pb−Free and are RoHS Compliant
*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G
VCEO
60 80
Vdc
Collector−Base Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G
VCB Vdc 60
80
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25_C Derate above 25_C
VEB 5.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJE700 |
INCHANGE |
PNP Transistor |
|
| 2 | MJE700 |
Motorola |
4.0 AMPERE DARLINGTON POWER TRANSISTORS |
|
| 3 | MJE700 |
ON |
DARLINGTON POWER TRANSISTORS |
|
| 4 | MJE700 |
Fairchild |
PNP Epitaxial Silicon Darlington Transistor |
|
| 5 | MJE700 |
Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
|
| 6 | MJE700T |
Motorola |
4.0 AMPERE DARLINGTON POWER TRANSISTORS |
|
| 7 | MJE700T |
Central Semiconductor |
POWER TRANSISTOR |
|
| 8 | MJE700T |
INCHANGE |
PNP Transistor |
|
| 9 | MJE701 |
Fairchild |
PNP Epitaxial Silicon Darlington Transistor |
|
| 10 | MJE701 |
INCHANGE |
PNP Transistor |
|
| 11 | MJE701 |
Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
|
| 12 | MJE701T |
Central Semiconductor |
POWER TRANSISTOR |
|