Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MJE701T |
Click to view a larger image
| Part Number | MJE701T |
| Manufacturer | INCHANGE |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A ·Complement to Type MJE801T ·Minimum Lot-to-Lot variations for robust device... |
| Features |
L CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -40mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA
VBE(on)-1 Base-Emitter On Voltage
IC= -2A; VCE= -3V
VBE(on)-2 Base-Emitter On Voltage
IC= -4A; VCE= -3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= -60V; IB= 0
VCB= -60V; IE= 0 VCB= -60V; IE= 0;TC= 100℃
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -2 A ; VCE... |
| Document |
 MJE701T Data Sheet
PDF 210.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJE701 |
Fairchild |
PNP Epitaxial Silicon Darlington Transistor |
|
| 2 | MJE701 |
INCHANGE |
PNP Transistor |
|
| 3 | MJE701 |
Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
|
| 4 | MJE701T |
Central Semiconductor |
POWER TRANSISTOR |
|
| 5 | MJE700 |
INCHANGE |
PNP Transistor |
|