MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO V.
n IC = - 10mA, IB = 0 Min. -60 -80 -100 -100 -100 -500 -2 750 750 100 -2.5 -2.8 -3 -1.2 -2.5 -3 V V V V V V Max. Units V V µA µA µA µA mA ICEO VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100°C VBE = - 5V, IC = 0 VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A IC = - 1.5A, IB = - 30mA IC = - 2A, IB = - 40mA IC = - 4A, IB = - 40mA VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A ICBO IEBO hFE Emitter Cut-off Current DC Current Gain : MJE700/702 : MJE701/703 : ALL DEVICES VCE(sat) Collector-Emitter .
The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors d.
·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MJE700 |
INCHANGE |
PNP Transistor | |
2 | MJE700 |
Motorola |
4.0 AMPERE DARLINGTON POWER TRANSISTORS | |
3 | MJE700 |
ON |
DARLINGTON POWER TRANSISTORS | |
4 | MJE700 |
Fairchild |
PNP Epitaxial Silicon Darlington Transistor | |
5 | MJE700 |
Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS | |
6 | MJE700G |
ON Semiconductor |
Plastic Darlington Complementary Silicon Power Transistors | |
7 | MJE700T |
Motorola |
4.0 AMPERE DARLINGTON POWER TRANSISTORS | |
8 | MJE700T |
Central Semiconductor |
POWER TRANSISTOR | |
9 | MJE700T |
INCHANGE |
PNP Transistor | |
10 | MJE701T |
Central Semiconductor |
POWER TRANSISTOR | |
11 | MJE701T |
INCHANGE |
PNP Transistor | |
12 | MJE702 |
INCHANGE |
PNP Transistor |