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MJE701 |
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| Part Number | MJE701 |
| Manufacturer | INCHANGE |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A ·Complement to Type MJE801 ·Minimum Lot-to-Lot variations for robust device ... |
| Features |
CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -40mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA
VBE(on)-1 Base-Emitter On Voltage
IC= -2A; VCE= -3V
VBE(on)-2 Base-Emitter On Voltage
IC= -4A; VCE= -3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= -60V; IB= 0
VCB= -60V; IE= 0 VCB= -60V; IE= 0;TC= 100℃
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -2 A ; VCE=... |
| Document |
 MJE701 Data Sheet
PDF 206.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJE700 |
INCHANGE |
PNP Transistor |
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| 2 | MJE700 |
Motorola |
4.0 AMPERE DARLINGTON POWER TRANSISTORS |
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| 3 | MJE700 |
ON |
DARLINGTON POWER TRANSISTORS |
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| 4 | MJE700 |
Fairchild |
PNP Epitaxial Silicon Darlington Transistor |
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| 5 | MJE700 |
Central Semiconductor |
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