MJD5731 Silicon PNP Power Transistor Datasheet

MJD5731 Silicon PNP Power Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -350V(Min) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier SWITCHMODE power supply drivers and other switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.

Features

or MJD5731 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V (BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -10V MIN -350 TYP MAX UNIT V -1.0 V -1.5 V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain VCE= -250V; IE= 0 VCB= -350V; IE= 0 VEB= -5V; IC=0 IC= -0.3A; VCE= -10V 30 IC= -1A; VCE= -10V 10 -0.1 mA -10 uA -0.5 mA 175 fT Current-Ga.

The same part from a different manufacturer

MJD5731 - ON

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power .

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MJD5731 - Inchange Semiconductor