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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R MJD50TF MAIN CHARACTERISTICS IC 1.0A VCEO 400V PC(DPAK) 15W Package APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit （RoHS） FEATURES .
High breakdown voltage
High current capability
High switching speed
High reliability
RoHS product
DPAK
ORDER MESSAGE
- Halogen-Reel MJD50TF-R-A
Order codes
-
-
Halogen-Free-Reel Halogen-Bag
MJD50TF-R-AR MJD50TF-R-C
- Halogen-Free-Bag MJD50TF-R-CR
Marking
MJD50
Package
DPAK
：202006M
1/5
R
ABSOLUTE RATINGS (Tc=25℃)
MJD50TF
Parameter
Symbol
Value
— Collector- Emitter Voltage（IE=0）
VCBO
700
— Collector- Emitter Voltage（IB=0）
VCEO
400
— Emitter-Base Voltage
VEBO
10
Collector Current（DC）
IC
1
Collector Current（pulse）
ICP
2
Base Current（DC）
I.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJD50 |
Fairchild |
NPN Epitaxial Silicon Transistor |
|
| 2 | MJD50 |
ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 3 | MJD50 |
Motorola |
NPN SILICON POWER TRANSISTORS |
|
| 4 | MJD50 |
ON Semiconductor |
High Voltage Power Transistors |
|
| 5 | MJD50 |
Kexin |
NPN Epitaxial Silicon Transistor |
|
| 6 | MJD50 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | MJD50 |
JILIN SINO |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 8 | MJD5731 |
ON |
High Voltage PNP Silicon Power Transistors |
|
| 9 | MJD5731 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 10 | MJD112 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 11 | MJD112 |
MCC |
Silicon NPN epitaxial planer Transistors |
|
| 12 | MJD112 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|