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·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOL.
0 UNIT ℃/W ℃/W MJD50 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 10V ICEO Collector Cutoff Current VCE= 300V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 ICBO Collector Cutoff Current VCB= 500V; IE= 0 hFE-1 DC Current Gain IC= 0.3A; VCE= 10V hFE-2 D.
MJD50 - Fairchild
MJD47 / MJD50 — NPN Epitaxial Silicon Transistor March 2014 MJD47 / MJD50 NPN Epitaxial Silicon Transistor Features •.
MJD50 - JILIN SINO
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R MJD50TF MAIN CHARACTERISTICS IC 1.0A VCEO 400V PC(DPAK) .
MJD50 - ST Microelectronics
The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-.
MJD50 - ON Semiconductor
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications Designed fo.
MJD50 - Kexin
SMD Type Transistors NPN Epitaxial Silicon Transistor MJD47;MJD50 Features Load Formed for Surface Mount Application S.
MJD50 - Motorola
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD47/D High Voltage Power Transistors DPAK For Surface .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJD50TF |
JILIN SINO |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 2 | MJD5731 |
ON |
High Voltage PNP Silicon Power Transistors |
|
| 3 | MJD5731 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | MJD112 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 5 | MJD112 |
MCC |
Silicon NPN epitaxial planer Transistors |
|
| 6 | MJD112 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | MJD112 |
Fairchild Semiconductor |
NPN Silicon Darlington Transistor |
|
| 8 | MJD112 |
CDIL |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |
|
| 9 | MJD112 |
JCET |
NPN Transistor |
|
| 10 | MJD112 |
GME |
Epitaxial Planar NPN Transistor |
|
| 11 | MJD112 |
ON Semiconductor |
Complementary Darlington Power Transistor |
|
| 12 | MJD112 |
MCC |
NPN Transistor |
|