RoHS(EU 2002/95/EC)。 (IPD) MIP2C40MP MOS ■ • : 80% • • ) 8 Unit : mm (100 VAC : 20 mW, 9.4±0.3 7 5 7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2 ( − 12 ) ■ V V V V V mA °C °C • • AC ( ) 1 2 3 4 2.54±0.25 VCC VDD CL ■ TC = 25°C ± 3°C 、 ht tp :// w w w 、 .s em ic on .p an as 、 on ic 。 .c o. jp 。 0.5±.
.0 200
5.5 10.0 245
µA µA
VCC = 15 V, VD = 5 V, ICL = 50 µA VCC = 15 V, VD = 5 V, ICL = 50 µA 3.0
3˚ to 15˚
+0 0.25 -0.05
.10
%
V
V V
: 2003
8
SLB00052AJD
1
Free Datasheet http://www.Datasheet4U.com
RoHS(EU 2002/95/EC)。
MIP2C40MP
■ TC = 25°C ± 3°C ( )
VFB
VCC = 15 V, VD = 5 V, IFB = 50 µA ICL = 50 µA VCC = 15 V, VD = 5 V, FB: Open, ICL = 50 µA VDD = 0 V, VD = 40 V, FB: Open, CL: Open VDD = 4 V, VD = 40 V, FB: Open, CL: Open VCC = 15 V, VD = 5 V, FB: Open, ICL = 10 µA fOSC → fOSC(L)
0.7
1.0
1.3
V
ICC VDD Ich1 Ich2 CL VCL CL ICL1
0.3
0.5
0.7
mA
4.5
6.0
7.5
mA
0.9
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MIP2C10MP |
Panasonic |
Silicon MOS type integrated circuit | |
2 | MIP2C2 |
Matsushita |
High-Performance IPD | |
3 | MIP2C30MP |
Panasonic |
Silicon MOS-type IC | |
4 | MIP2C50MP |
Panasonic |
Silicon MOS Type Integrated Circuits | |
5 | MIP251-10 |
euroclamp |
MIP25x-10 /16-IQ | |
6 | MIP252-10 |
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7 | MIP281 |
Panasonic |
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8 | MIP289 |
Panasonic |
Silicon MOS type integrated circuit | |
9 | MIP2E1D |
Matsushita |
High-Performance IPD for Battery Chaegers | |
10 | MIP2E1DMC |
Panasonic |
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11 | MIP2E1DMS |
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Silicon MOS-type integrated circuit | |
12 | MIP2E1DMTSCF |
Panasonic |
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