http://www.semi、con.panaso、nic.co.jp、。。13.5±0.3 MIP281 MOS (IPD) s • MOS FET CMOS • (85 VAC ∼ 274 VAC) •( ) • s • • AC • etc. ( ) s Ta=25°C VD 700 V VB 7 V VF 7 V ID 220 mA IDP 330 mA Tch 150 °C Tstg −55 ∼ +150 °C s 1 15.4±0.3 2.8±0.2 1.5±0.2 10.5±0.3 9.5±0.2 8.0±0.2 Unit : mm φ3.7±0.1 4.5±0.2 1.4±0.1 6.7±0.2 2.8±0.2 2.5±.
5 4.6 1.6 2.5 3.6 −58 −40 −25 4.7 5.1 5.5 kHz % µA µA V V µA µA mA mA µA V 0.18 0.20 0.22 200 100 130 140 150 70 A ns ns °C °C 31.2 36.0 50 700 100 50 Ω µA V ns ns 50 3.0 70 V °C/W °C/W 2 http://www.semi、con.panaso、nic.co.jp、。。 1) Power lntegrations() 2) IPD IPD 3) IPD IPD 4) IPD )MIP5MIP5MIP7 IPD IPD MIP13 MIP14 MIP15 MIP16 MIP17 MIP18 MIP01 MIP02 MIP2 MIP3 MIP4 MIP9A MIP10 MIP811/812 MIP11 MIP814/815/816 MIP803/804/806 MIP82 MIP9E MIP55 MIP5 MIP51 MIP7 (50) (50) DC-DC EL LED / .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MIP289 |
Panasonic |
Silicon MOS type integrated circuit | |
2 | MIP251-10 |
euroclamp |
MIP25x-10 /16-IQ | |
3 | MIP252-10 |
euroclamp |
MIP25x-10 /16-IQ | |
4 | MIP2C10MP |
Panasonic |
Silicon MOS type integrated circuit | |
5 | MIP2C2 |
Matsushita |
High-Performance IPD | |
6 | MIP2C30MP |
Panasonic |
Silicon MOS-type IC | |
7 | MIP2C40MP |
Panasonic |
Silicon MOS Type Integrated Circuits | |
8 | MIP2C50MP |
Panasonic |
Silicon MOS Type Integrated Circuits | |
9 | MIP2E1D |
Matsushita |
High-Performance IPD for Battery Chaegers | |
10 | MIP2E1DMC |
Panasonic |
IPD | |
11 | MIP2E1DMS |
Panasonic |
Silicon MOS-type integrated circuit | |
12 | MIP2E1DMTSCF |
Panasonic |
Silicon MOSFET |