MIP2C10MP - Panasonic

MIP2C10MP Silicon MOS type integrated circuit

(IPD) MIP2C10MP MOS ■ • : 80% • • ) 8 Unit : mm (100 VAC : 20 mW, 9.4±0.3 7 5 7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2 ( − 12 ) ■ • • AC ( ) 1 2 3 4 2.54±0.25 0.5±0.1 VD VCC VDD CL VCC VDD VFB VCL ID Tch Tstg 700 45 8 8 8 350 150 −55 ∼ +150 V V V V V mA °C °C 1.2±0.25 (2,3,7PIN) 1 : VDD 2 : FB 3 : CL (1,4,5,8PIN) 4 : VCC 5 : Drain 7 : Source 8 : So.

Features

8 SLB00049AJD 1 MIP2C10MP
■ TC = 25°C ± 3°C ( ) VFB VCC = 15 V, VD = 5 V, IFB = 50 µA ICL = 50 µA VCC = 15 V, VD = 5 V, FB: Open, ICL = 50 µA VDD = 0 V, VD = 40 V, FB: Open, CL: Open VDD = 4 V, VD = 40 V, FB: Open, CL: Open VCC = 15 V, VD = 5 V, FB: Open, ICL = 10 µA fOSC → fOSC(L) VCC = 15 V, VD = 5 V, FB: Open VCC = 15 V, VD = 5 V, FB: Open VCC = 15 V, FB: Open, ICL > 35 µA VCC = 15 V, FB: Open, ICL < 5 µA ICL > 35 µA VDD = 5 V, FB: Open, ICL = 50 µA 0.7 1.0 1.3 V ICC VDD Ich1 Ich2 CL VCL CL ICL1 ICLHYS ILIMIT ILIMIT
*
* 0.2 0.3 0.5 mA 2.3 3.5 4.7 mA 0.5 1.0 1.5 mA 1.7.