MI3415 MI3415-VB Datasheet P-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = - 6 V 0.054 at VGS = - 4.5 V ID (A)a - 5.6 -5 -4.5 Qg (Typ.) 11.4 nC (SOT-23) S TO-236 FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - .
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• For Mobile Computing
- Load Switch - Notebook Adaptor Switch - DC/DC Converter
G1
G
3D
S2
Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
VDS
VGS
TC = 25 °C
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
- 30
± 20 - 5.6 - 5.1 - 5.4b,c - 4.3b,c
Pulsed Drain Current (t = 100 µs) Continous Source-Drain Diode Current
Maximum Power Dissipation
IDM
TC = 25 °C TA = 25 °C
IS
TC = 25 °C
TC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MI3407 |
MegaPower Semiconductor |
P-Channel 30V MOSFET | |
2 | MI3035S |
Vishay |
Schottky Barrier Rectifier | |
3 | MI3045S |
Vishay |
Schottky Barrier Rectifier | |
4 | MI3050H48xx |
MMD |
MIH Series / 5mm x 7mm Ceramic SMD | |
5 | MI3060C |
Vishay |
Dual Common Cathode Schottky Rectifier | |
6 | MI308 |
Mitsubishi Electric |
PIN Diode RF Power Switching | |
7 | MI3130 |
VBsemi |
N-Channel MOSFET | |
8 | MI31T |
Micro Electronics |
INFRARED EMITTING DIODE | |
9 | MI31TA |
Micro Electronics |
INFRARED EMITTING DIODE | |
10 | MI320240A |
MULTI-INNO TECHNOLOGY |
Display Module | |
11 | MI32T |
Micro Electronics |
INFRARED EMITTING DIODE | |
12 | MI32T-L |
Micro Electronics |
INFRARED EMITTING DIODE |