MI3407 - MegaPower Semiconductor

MI3407 P-Channel 30V MOSFET

This miniature surface monut MOSFET uses advanced t rench process , low R DS ( on ) assures minimal power loss and energy conversion , which makes this device ideal for use in power managementcircuit. Features V DS (V) = -30V I D (A) = -4A (V GS = -10V) R DS(on) = 0.060 ohm @ V GS = -10V R DS(on) = 0.090 ohm@ V GS = -4.5V Low gate charge Fast switching spee.

Features

V DS (V) = -30V I D (A) = -4A (V GS = -10V) R DS(on) = 0.060 ohm @ V GS = -10V R DS(on) = 0.090 ohm@ V GS = -4.5V Low gate charge Fast switching speed Applications Load switch DC - DC converters Power management D S G SOT-23 G D S Absolute Maximum Ratings (T A = 25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b a Symbol V DS V GS T A =25℃ T A =70℃ ID I DM IS T A =25℃ T A =70℃ PD T J ,T stg Maximum Units V - 30 ±20 -4 -3.2 A - 20 -2.2 1.4 1.0 -55 to 150 W ℃ A Continuous Source Current (Diode Conduction) .