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MI3415 |
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| Part Number | MI3415 |
| Manufacturer | VBsemi |
| Description | MI3415 MI3415-VB Datasheet P-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = - 6 V 0.054 at VGS = - 4.5 V ID (A)a ... |
| Features |
• TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter G1 G 3D S2 Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C - 30 ± 20 - 5.6 - 5.1 - 5.4b,c - 4.3b,c Pulsed Drain Current (t = 100 µs) Continous Source-Drain Diode Current Maximum Power Dissipation IDM TC = 25 °C TA = 25 °C IS TC = 25 °C TC... |
| Document |
 MI3415 Data Sheet
PDF 329.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MI3407 |
MegaPower Semiconductor |
P-Channel 30V MOSFET |
|
| 2 | MI3035S |
Vishay |
Schottky Barrier Rectifier |
|
| 3 | MI3045S |
Vishay |
Schottky Barrier Rectifier |
|
| 4 | MI3050H48xx |
MMD |
MIH Series / 5mm x 7mm Ceramic SMD |
|
| 5 | MI3060C |
Vishay |
Dual Common Cathode Schottky Rectifier |
|