MI3130 - VBsemi

MI3130 N-Channel MOSFET

MI3130-VB MI3130-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V 30 0.030 at VGS = 2.5 V ID (A)a 6.8 6.0 Qg (Typ.) 10 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices RoHS COMPLIANT D D G GD S S N-Channel MOSFET ABSOLUTE MAXI.

Features

• Halogen-free
• TrenchFET® Power MOSFET APPLICATIONS
• Load Switches for Portable Devices RoHS COMPLIANT D D G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 6.8a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 6a 6.8 a, b , c TA = 70 °C 6 a, b, c A Pulsed Drain Current IDM 30 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 5.2 2.1b, c TC = 25 °C 6.3 Maximum Power Dissipation TC = 70 °C TA = 2.