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MI3407 |
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| Part Number | MI3407 |
| Manufacturer | MegaPower Semiconductor |
| Description | This miniature surface monut MOSFET uses advanced t rench process , low R DS ( on ) assures minimal power loss and energy conversion , which makes this device ideal for use in power managementcircuit.... |
| Features |
V DS (V) = -30V I D (A) = -4A (V GS = -10V) R DS(on) = 0.060 ohm @ V GS = -10V R DS(on) = 0.090 ohm@ V GS = -4.5V
Low gate charge Fast switching speed
Applications
Load switch DC - DC converters Power management
D S G
SOT-23
G
D
S
Absolute Maximum Ratings (T A = 25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current
b a
Symbol V DS V GS T A =25℃ T A =70℃ ID I DM IS T A =25℃ T A =70℃ PD T J ,T stg
Maximum
Units V
- 30
±20
-4 -3.2
A
- 20
-2.2 1.4 1.0 -55 to 150 W ℃ A
Continuous Source Current (Diode Conduction) ... |
| Document |
 MI3407 Data Sheet
PDF 301.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MI3415 |
VBsemi |
P-Channel MOSFET |
|
| 2 | MI3035S |
Vishay |
Schottky Barrier Rectifier |
|
| 3 | MI3045S |
Vishay |
Schottky Barrier Rectifier |
|
| 4 | MI3050H48xx |
MMD |
MIH Series / 5mm x 7mm Ceramic SMD |
|
| 5 | MI3060C |
Vishay |
Dual Common Cathode Schottky Rectifier |
|