MG25Q6ES42 - Toshiba

MG25Q6ES42 Silicon N Channel IGBT GTR Module

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: • Low saturation voltage: • Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat) = 4.0V (Max.) • The electrodes are isolated from case Maximum Ra.

Features

• 6 IGBTs are built into 1 package
• High speed:
• Low saturation voltage:
• Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat) = 4.0V (Max.)
• The electrodes are isolated from case Maximum Ratings (Ta = 25°C) CHARACTERISTICS Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque SYMBOL RATING VCES VGES IC ICP IF IFM 1200 ± 20 25 50 25 50 PC 200 Tj Tstg VIsol — 150 -40 ~ 125 2500 (AC 1 Minute) 3 UNIT .