MG25Q2YS40 - Toshiba

MG25Q2YS40 Silicon N Channel IGBT GTR Module

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • Low saturation voltage: • Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat)= 4.0V (Max.) • The electrodes are isolated from case • Includes a complete h.

Features

• High input impedance
• High speed:
• Low saturation voltage:
• Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat)= 4.0V (Max.)
• The electrodes are isolated from case
• Includes a complete half bridge card in one package Maximum Ratings (Ta = 25°C) CHARACTERISTICS SYMBOL RATING UNIT Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque (Terminal/Mounting) VCES VGES IC ICP IF IFM PC Tj Tstg VIsol — 1200.