MG25Q1BS11 - Toshiba

MG25Q1BS11 Silicon N - Channel IGBT

TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications MG25Q1BS11 Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power diss.

Features

V, VCE = 0 VCE = 1200V, VGE = 0 IC = 25mA, VCE = 5V VCE (sat) IC = 25A, VGE = 15V Cies tr ton tf toff Rth (j-c) VCE = 10V, VGE = 0, f=1MHz ― MG25Q1BS11 Min Typ. Max Unit ― ― ±500 nA ― ― 1.0 mA 3.0 ― 6.0 V ― 2.2 2.7 V ― 3000 ― pF ― 0.3 0.6 ― 0.4 0.8 µs ― 0.6 1.0 ― 1.2 1.8 ― ― 0.5 °C / W 2 2003-04-11 MG25Q1BS11 3 2003-04-11 MG25Q1BS11 4 2003-04-11 MG25Q1BS11 RESTRICTIONS ON PRODUCT USE 000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent e.