ME2N7002D2-G - Matsuki

ME2N7002D2-G N-Channel MOSFET

The ME2N7002D2 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦4.5Ω@VGS=10V ● RDS(ON)≦5.5Ω@VGS=4.5V ● Super high density cell design for .

Features

● RDS(ON)≦4.5Ω@VGS=10V
● RDS(ON)≦5.5Ω@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter Ordering Information: ME2N7002D2 (Pb-free) ME2N7002D2-G (Green product-Halogen free) N-Channel MOSFET Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction.