The ME2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management an.
● Simple Drive Requirement
● Small Package Outline
● ROHS Compliant
● ESD Rating = 2000V HBM
Mechanical data
● High density cell design for low RDS(ON)
● Voltage controlled small signal switching.
● Rugged and reliable.
● High saturation current capability.
● High-speed switching.
● Not thermal runaway.
● The soldering temperature and time shall
not exceed 26.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME2N70023D2-G |
Matsuki |
N-Channel MOSFET | |
2 | ME2N70023E1-G |
Matsuki |
N-Channel MOSFET | |
3 | ME2N7002D1KW-G |
Matsuki |
Dual N-Channel MOSFET | |
4 | ME2N7002D2 |
Matsuki |
N-Channel MOSFET | |
5 | ME2N7002D2-G |
Matsuki |
N-Channel MOSFET | |
6 | ME2N7002D2KW-G |
Matsuki |
Dual N-Channel MOSFET | |
7 | ME2N7002DA |
Matsuki |
N-Channel MOSFET | |
8 | ME2N7002DA-G |
Matsuki |
N-Channel MOSFET | |
9 | ME2N7002DKW-G |
Matsuki |
Dual N-Channel MOSFET | |
10 | ME2N7002DW |
Matsuki |
N-Channel MOSFET | |
11 | ME2N7002E |
Matsuki |
N-Channel MOSFET | |
12 | ME2N7002E-G |
Matsuki |
N-Channel MOSFET |