ME2N7002DA-G - Matsuki

ME2N7002DA-G N-Channel MOSFET

The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management an.

Features

● RDS(ON) ≦4Ω@VGS=10V
● RDS(ON) ≦4Ω@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
● Capable doing Cu wire bonding APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
 Th Ordering Information: ME2N7002DA (Pb-free)
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