ME2N7002D2-G |
Part Number | ME2N7002D2-G |
Manufacturer | Matsuki |
Description | The ME2N7002D2 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to ... |
Features |
● RDS(ON)≦4.5Ω@VGS=10V ● RDS(ON)≦5.5Ω@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter Ordering Information: ME2N7002D2 (Pb-free) ME2N7002D2-G (Green product-Halogen free) N-Channel MOSFET Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction... |
Document |
ME2N7002D2-G Data Sheet
PDF 627.43KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME2N7002D2 |
Matsuki |
N-Channel MOSFET | |
2 | ME2N7002D2KW-G |
Matsuki |
Dual N-Channel MOSFET | |
3 | ME2N7002D |
Matsuki |
N-Channel MOSFET | |
4 | ME2N7002D1KW-G |
Matsuki |
Dual N-Channel MOSFET | |
5 | ME2N7002DA |
Matsuki |
N-Channel MOSFET |