ME25N10F - Matsuki

ME25N10F N-Channel MOSFET

The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES ● RDS(ON)≦85mΩ@VGS=10V ● RDS(ON)≦105mΩ@VGS=5V ● Super high density cell design for extremely low RDS(ON).

Features

● RDS(ON)≦85mΩ@VGS=10V
● RDS(ON)≦105mΩ@VGS=5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter (TO-220F) Top View
* The Ordering Information: ME25N10F (Pb-free) ME25N10F-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ Operat.