ME25N15-G - Matsuki

ME25N15-G N-Channel MOSFET

The ME25N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and o.

Features

● RDS(ON) ( typ) 60mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● DC/DC Converter
● Load Switch
● LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) Top View
* The Ordering Information: ME25N15 (Pb-free) ME25N15-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise .