ME25N06-G - Matsuki

ME25N06-G N-Channel Enhancement MOSFET

The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and o.

Features

● RDS(ON)≦62mΩ@VGS=10V
● RDS(ON)≦86mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter PIN CONFIGURATION (TO-252) Top View e Ordering Information: ME25N06 (Pb-free) ME25N06-G (Green product) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25℃ Current(Tj=150℃) TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃.