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ME25N10F |
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| Part Number | ME25N10F |
| Manufacturer | Matsuki |
| Description | The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mi... |
| Features |
● RDS(ON)≦85mΩ@VGS=10V ● RDS(ON)≦105mΩ@VGS=5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-220F) Top View * The Ordering Information: ME25N10F (Pb-free) ME25N10F-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ Operat... |
| Document |
 ME25N10F Data Sheet
PDF 928.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ME25N10F-G |
Matsuki |
N-Channel MOSFET |
|
| 2 | ME25N10T |
Matsuki |
N-Channel MOSFET |
|
| 3 | ME25N10T-G |
Matsuki |
N-Channel MOSFET |
|
| 4 | ME25N15 |
Matsuki |
N-Channel MOSFET |
|
| 5 | ME25N15-G |
Matsuki |
N-Channel MOSFET |
|