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ME25N06-G |
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| Part Number | ME25N06-G |
| Manufacturer | Matsuki |
| Description | The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to min... |
| Features |
● RDS(ON)≦62mΩ@VGS=10V ● RDS(ON)≦86mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-252) Top View e Ordering Information: ME25N06 (Pb-free) ME25N06-G (Green product) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25℃ Current(Tj=150℃) TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃... |
| Document |
 ME25N06-G Data Sheet
PDF 1.30MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ME25N06 |
Matsuki |
N-Channel Enhancement MOSFET |
|
| 2 | ME25N10F |
Matsuki |
N-Channel MOSFET |
|
| 3 | ME25N10F-G |
Matsuki |
N-Channel MOSFET |
|
| 4 | ME25N10T |
Matsuki |
N-Channel MOSFET |
|
| 5 | ME25N10T-G |
Matsuki |
N-Channel MOSFET |
|