MDU10N180 - MagnaChip

MDU10N180 Single N-channel MOSFET

The MDU10N180 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU10N180 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 100V  ID = 40 A @VGS = 10V  Very low on-resistance RDS(ON) < 18.0 mΩ @V.

Features

 VDS = 100V  ID = 40 A @VGS = 10V  Very low on-resistance RDS(ON) < 18.0 mΩ @VGS = 10V < 23.0 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 1 4 5 8 4 1 PDFN56 Absolute Maximum Ratings (TJ = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (3) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TA=25oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-.