MDU1511RH - MagnaChip

MDU1511RH Single N-channel Trench MOSFET

The MDU1511 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1511 is suitable device for DC/DC Converter and general purpose applications. Features VDS = 30V ID = 100A @VGS = 10V RDS(ON) < 2.4 mΩ @VGS = 10V < 3.3 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Te.

Features

VDS = 30V ID = 100A @VGS = 10V RDS(ON) < 2.4 mΩ @VGS = 10V < 3.3 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D D D D D D D D D S S S G G S S S G PowerDFN56 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage TC=25 C Continuous Drain Current (1) TC=70 C TA=25 C TA=70oC Pulsed Drain Current TC=25 C TC=70 C Power Dissipation TA=25 C TA=70oC Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range EAS TJ, Tstg o o o o o o Symbol VDSS VGSS Rating 30 ±20 100.0 94.0 Unit V V ID 36.1(3) 28.8(3) A IDM 100 78.1 50.