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MDU10N180 |
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| Part Number | MDU10N180 |
| Manufacturer | MagnaChip |
| Description | The MDU10N180 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU10N180 is suitable device for Sy... |
| Features |
VDS = 100V ID = 40 A @VGS = 10V Very low on-resistance RDS(ON)
< 18.0 mΩ @VGS = 10V < 23.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
1 4
5 8
4 1
PDFN56
Absolute Maximum Ratings (TJ = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (3)
TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC
Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC TC=100oC TA=25oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-... |
| Document |
 MDU10N180 Data Sheet
PDF 1.19MB |
| Distributor | Stock | Price | Buy |
|---|
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