MDU10N070RH - MagnaChip

MDU10N070RH N-channel MOSFET

The MDU10N070RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU10N070RH is suitable device for Synchronous Rectification for Server and general purpose applications. Features  VDS = 100V  ID = 53 A @VGS = 10V  Very low on-resistance RDS(ON) < 7.4 mΩ.

Features

 VDS = 100V  ID = 53 A @VGS = 10V  Very low on-resistance RDS(ON) < 7.4 mΩ @VGS = 10V < 9.1 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5 8 D Pin 5,6,7,8 1 4 4 1 PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC Power Dissipation Single Pulse Avalanche Energy (3) TC=25oC TC=100oC TA=25oC ( T ≤ 10s) Junction and Storage Temperature Range Thermal Characteristics Characteristics Therma.