The MDP1723 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1723 is suitable device for Synchronous Rectification For Server and general purpose applications. Features VDS = 40V ID = 120A @VGS = 10V RDS(ON) < 2.3 mΩ @VGS = 10V 100% UIL Tes.
VDS = 40V ID = 120A @VGS = 10V RDS(ON) < 2.3 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D GDS TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jun. 2021. Version 1.3 1 G S S.
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Sw.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MDP1723TH |
MagnaChip |
N-Channel MOSFET | |
2 | MDP10N027 |
MagnaChip |
Single N-channel Trench MOSFET | |
3 | MDP10N027TH |
MagnaChip |
N-channel MOSFET | |
4 | MDP10N055 |
MagnaChip |
Single N-channel MOSFET | |
5 | MDP10N055 |
INCHANGE |
N-Channel MOSFET | |
6 | MDP10N055TH |
MagnaChip |
N-Channel MOSFET | |
7 | MDP10N50 |
MagnaChip |
N-Channel MOSFET | |
8 | MDP10N60G |
MagnaChip |
N-Channel MOSFET | |
9 | MDP10N60GTH |
INCHANGE |
N-Channel MOSFET | |
10 | MDP11N60 |
MagnaChip |
N-Channel MOSFET | |
11 | MDP12N50 |
MagnaChip |
N-Channel MOSFET | |
12 | MDP12N50B |
MagnaChip |
N-Channel MOSFET |