MDP11N60 - MagnaChip

MDP11N60 N-Channel MOSFET

The MDP11N60 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP11N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  VDS = 660V  ID = 11A  RDS(ON) ≤ 0.55Ω Applications @ VGS = 10V @ VGS = 10V  Power Supply.

Features

 VDS = 600V  VDS = 660V  ID = 11A  RDS(ON) ≤ 0.55Ω Applications @ VGS = 10V @ VGS = 10V  Power Supply  PFC  High Current, High Speed Switching GDS Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD Dv/dt EAS.