MDP12N50B - MagnaChip

MDP12N50B N-Channel MOSFET

The MDP/F12N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F12N50B is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Ab.

Features

VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP12N50B MDF12N50B 500 ±30 11.5 11.5
* 7.0 7.0
* 46 46
* 165 4.