MDP13N50 - MagnaChip

MDP13N50 N-Channel MOSFET

The MDP13N50 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDP13N50 is suitable device for SMPS, HID and general purpose applications. Features  VDS = 500V  ID = 13.0A @VGS = 10V  RDS(ON) < 0.5Ω @VGS = 10V Applications  Power Supply  HID  Lighting Absolute Maximum.

Features

 VDS = 500V
 ID = 13.0A @VGS = 10V
 RDS(ON) < 0.5Ω @VGS = 10V Applications
 Power Supply
 HID
 Lighting Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Jan. 2021. Version 2.6 TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol.