MDF9N60B - MagnaChip

MDF9N60B N-Channel Trench MOSFET

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 9.0A RDS(ON) ≤ 0.80Ω @ VGS = 10V @ VGS = 10V Applications Powe.

Features

VDS = 600V ID = 9.0A RDS(ON) ≤ 0.80Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching G DS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(※) Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) T.